Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-26
2011-10-04
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S157000, C438S300000, C257SE21421
Reexamination Certificate
active
08030163
ABSTRACT:
A method includes depositing a sacrificial gate electrode to one or more multi-gate fins. The sacrificial gate electrode is patterned such that it is coupled to a gate region and substantially no sacrificial gate electrode is coupled to source and drain regions. A dielectric film is formed that is coupled to the source and drain regions. The sacrificial gate electrode is removed and a spacer gate dielectric is deposited to the gate region wherein substantially no spacer gate dielectric is deposited to the source and drain regions. The spacer gate dielectric is etched to completely remove the spacer gate dielectric from the gate region area that is to be coupled with a final gate electrode except a remaining pre-determined thickness of spacer gate dielectric that is to be coupled with the final gate electrode that remains coupled with the dielectric film.
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Doyle Brian S.
Kavalieros Jack T.
Pillarisetty Ravi
Shah Uday
Cool Patent P.C.
Curtin Joseph P.
Hall Jessica
Intel Corporation
Landau Matthew
LandOfFree
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