Reducing contamination in a process flow of forming a...

Details Reducing contamination in a process flow of forming a... Reducing contamination in a process flow of forming a...

2010-10-29

2011-11-01

Coleman, William D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

08048748

ABSTRACT:
In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.

REFERENCES:
patent: 6617226 (2003-09-01), Suguro et al.
patent: 2008/0111155 (2008-05-01), Capasso et al.
patent: 09148426 (1997-06-01), None
patent: 2006108205 (2006-04-01), None
Widmann et al., “Technologie hochintegrierter Schaltungen,” Spring, pp. 18, 19, 27, 1996.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2010 001 402.8 dated Nov. 17, 2010.

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