Reduced surface field device having an extended field plate and

Details Reduced surface field device having an extended field plate and Reduced surface field device having an extended field plate and

1998-11-20

2000-12-12

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257409, 257492, 257493, H01L 2976, H01L 2994, H01L 31062

Patent

active

061602906

ABSTRACT:
A semiconductor device (10) comprises a reduced surface field (RESURF) implant (14). A field oxide layer (20), having a length, is formed over the RESURF implant (14). A field plate (12) extends from a near-side of the field oxide layer (20) and over at least one-half of the length of the field oxide layer (20).

REFERENCES:
patent: 5168335 (1992-12-01), D'Arrigo et al.
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patent: 5304827 (1994-04-01), Malhi et al.
patent: 5378912 (1995-01-01), Pein
patent: 5430316 (1995-07-01), Contiero et al.
patent: 5627394 (1997-05-01), Chang et al.
patent: 5670396 (1997-09-01), Shibib
patent: 5747850 (1998-05-01), Mei
patent: 5981997 (1999-10-01), Kitamura

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