Reduced parasitic leakage in semiconductor devices

Details Reduced parasitic leakage in semiconductor devices Reduced parasitic leakage in semiconductor devices

1997-09-30

1999-11-09

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438242, 438243, 438526, H01L 218242

Patent

active

059813326

ABSTRACT:
A trench capacitor having a diffusion region adjacent to the collar to increase the gate threshold voltage of the parasitic MOSFET. This enables the use of a thinner collar while still achieving a leakage that is acceptable. In one embodiment, the diffusion region is self-aligned.

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