Reduced leakage interconnect structure

Details Reduced leakage interconnect structure Reduced leakage interconnect structure

2006-10-31

2009-12-01

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S618000, C438S637000, C438S672000, C438S686000, C257SE21175, C257SE21508, C257SE21575, C257SE21579, C257SE21586, C257SE23145, C257SE23152, C257SE23169

Reexamination Certificate

active

07625815

ABSTRACT:
An improved semiconductor device interconnect structure comprising a dielectric layer recessed with respect to the conductive interconnect features. This structure and method reduces embedded metallic residues from CMP scratches and metal cap applications and provides improved mechanical integrity at the capping layer/liner/dielectric interface.

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