Reduced hydrogen sidewall spacer oxide

Details Reduced hydrogen sidewall spacer oxide Reduced hydrogen sidewall spacer oxide

2007-12-11

2007-12-11

Sefer, A. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S184000, C438S230000, C257SE29266, C257SE29279, C257SE29152, C257SE29166

Reexamination Certificate

active

10739973

ABSTRACT:
An embodiment of the invention is a method of making a semiconductor structure10where the spacer oxide layer90is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure10having a spacer oxide layer90with a hydrogen content of less than 1%.

REFERENCES:
patent: 2002/0016084 (2002-02-01), Todd
patent: 2004/0086640 (2004-05-01), Luo et al.
patent: 2004/0161936 (2004-08-01), Jin et al.
patent: 2004/0232468 (2004-11-01), Solayappan
patent: 2005/0014354 (2005-01-01), Ozawa et al.
patent: 2005/0112817 (2005-05-01), Cheng et al.
patent: 2005/0151179 (2005-07-01), Parekh et al.
patent: 506287 (1992-09-01), None
patent: 4-184932 (1992-07-01), None
patent: 2003-264247 (2003-09-01), None
patent: WO 00/03425 (2000-01-01), None
P. Kohli, et al. “Effect of Nitride Sidewall Spacer Process on Boron Dose Loss in Ultra Shallow Junction Formation”.

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