Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2007-01-09
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C365S200000, C365S208000, C365S189050, C365S230030
Reexamination Certificate
active
10345735
ABSTRACT:
A reduced gate delay multiplexed interface and output buffer circuit for random access memory arrays, such as synchronous dynamic random access memory (“SDRAM”) devices, or other integrated circuit devices incorporating embedded memory arrays which reduces data access time and clock latency. In accordance with the present invention, data is multiplexed (or selected) and driven out at the memory bank level rather than at the output pad area (or the embedded RAM macro edge) as in prior art techniques.
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Hogan & Hartson LLP
Kubida William J.
Meza Peter J.
Sony Corporation
United Memories Inc.
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