Reduced floating body effect static random access memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S288000, C257SE27098, C257SE21661, C257SE27075

Reexamination Certificate

active

07105900

ABSTRACT:
An SRAM cell that may reduce or eliminate floating body effect when using a SOI and a method for fabricating the same are provided. A floating body of an access transistor of the SRAM is connected to a source region of a driver transistor, for example, through a body extension region extending from an active region. A silicide layer may be formed or a ground line contact may be over-etched to form a conductive contact plug that may provide a current path between the body exterior regions and the source region of the driver transistor.

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