Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-05-10
2011-05-10
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S189090, C365S230060
Reexamination Certificate
active
07940554
ABSTRACT:
A method of biasing a nonvolatile memory array. The nonvolatile memory array includes a first and second plurality of Y lines, a plurality of X lines, a first and second plurality of two terminal memory cells. Each first and second memory cell is coupled to one of the first or second plurality of Y lines and one of the plurality of X lines, respectively. Substantially all of the first plurality and second plurality of Y lines are driven to a Y line unselect voltage. At least one selected Y line of the first plurality of Y lines is driven to a Y line select voltage while floating remaining Y lines of the first plurality of Y lines and while driving substantially all of the second plurality of Y lines to the Y line unselect voltage.
REFERENCES:
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 5014241 (1991-05-01), Asakura et al.
patent: 5392242 (1995-02-01), Koike
patent: 5625590 (1997-04-01), Choi et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5841687 (1998-11-01), Rees
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6507531 (2003-01-01), Zhang
patent: 6618295 (2003-09-01), Scheuerlein
patent: 6631085 (2003-10-01), Kleveland et al.
patent: 6788600 (2004-09-01), Sugawara et al.
patent: 7081377 (2006-07-01), Cleeves
patent: 7463536 (2008-12-01), Scheuerlein et al.
patent: 2002/0163033 (2002-11-01), Sugawara et al.
patent: 2005/0269553 (2005-12-01), Sen et al.
patent: 2007/0114509 (2007-05-01), Herner
patent: 2008/0025085 (2008-01-01), Scheuerlein et al.
International Search Report and Written Opinion, International Application PCT/US2010/031876, International Searching Authority: European Patent Office (ISR/EP), Jul. 22, 2010.
Peter K. Naji et al. “A 256 kb 3.0V iTiMTJ Nonvolatile Magnetoresistive RAM.” Digest of Technical Papers of the 2001 IEEE International Solid-State Circuits COnference, ISSCC 2001 Session 7 Technology Directtions: Advanced Technologies 7.6, Feb 6, 2001, pp. 94-95, 404-405 of ISSCC Visual Supplement.
Fasoli Luca
Scheuerlein Roy E.
Auduong Gene N.
SanDisk 3D LLC
The Marbury Law Group PLLC
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