Redistribution layer and under bump material structure for conve

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

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Details

257760, 257751, 257779, H01L 2348, H01L 2352, H01L 2940

Patent

active

060113146

ABSTRACT:
An integrated circuit redistribution structure. The integrated circuit redistribution structure includes a plurality of conductive pads located on an active side of an integrated circuit. The integrated circuit redistribution structure includes a redistribution layer and an under bump material structure for receiving a solder bump. The redistribution layer can include a first mechanically protective layer which adheres to the active side of the integrated circuit. The redistribution layer includes a plurality of conductive lines in which at least one of the conductive lines is connected to at least one conductive pad. Each conductive line includes an adhesion and diffusion barrier layer, an electrical conductor layer, and a first metallic protective layer. The under bump material structure is formed over at least one conductive line. The under bump material structure includes a solder wettable metal layer formed over the redistribution layer, and a second metallic protective layer for receiving the solder bump.

REFERENCES:
patent: 5327013 (1994-07-01), Moore et al.
patent: 5547740 (1996-08-01), Higdon et al.
patent: 5604379 (1997-02-01), Mori
patent: 5719448 (1998-02-01), Ichikawa
patent: 5726500 (1998-03-01), Duboz et al.

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