Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-03-07
2006-03-07
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S406000
Reexamination Certificate
active
07008857
ABSTRACT:
A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.
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Akatsu Takeshi
Aulnette Cécile
Ghyselen Bruno
Osternaud Bénédite
Vaillant Yves-Mathieu
Le Dung A.
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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