Rectifying transfer gate device

Details Rectifying transfer gate device Rectifying transfer gate device

1996-08-30

1997-10-28

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257355, 257360, 257368, 323349, 323126, 323127, H01L 2976, H01L 2994, G05F 2402

Patent

active

056820542

ABSTRACT:
A rectifying transfer gate device having two transistors with a common drain region of a first conductivity. A doped region of a second conductivity opposite the first conductivity is positioned between the common drain region and corresponding drain electrode. This configuration forms a PN junction that acts as a diode by inhibiting electrical conduction. Therefore malfunctions due to undesired circulating current are decreased.

REFERENCES:
patent: 3831187 (1974-08-01), Neilson
patent: 4381201 (1983-04-01), Sakurai

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