Recovery processing method of an electrode

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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06905952

ABSTRACT:
While a transfer surface10aof a transfer plate10having a predetermined surface roughness is brought into contact with a plurality of bumps44B on a contact sheet44formed on a substrate44M having the coefficient of linear expansion larger than that of the transfer plate10at a predetermined pressure, the substrate44M and the transfer plate10are heated to a predetermined temperature to recover the surface roughness of the bump44B to a predetermined value.

REFERENCES:
patent: 90104620.5 (1991-01-01), None
patent: 0415896 (1991-03-01), None
patent: 8-96865 (1996-04-01), None
patent: 2000-294043 (2000-10-01), None
Office Action from Chinese Patent Office in Patent Application No. 031384099, dated Oct. 29, 2004.

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