Error detection/correction and fault detection/recovery – Data processing system error or fault handling – Reliability and availability
Reexamination Certificate
1998-03-05
2001-11-06
Trammell, James P. (Department: 2161)
Error detection/correction and fault detection/recovery
Data processing system error or fault handling
Reliability and availability
Reexamination Certificate
active
06314527
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates generally to the use partially defective synchronous memory chips. More particularly, the present invention relates to the configuration of defective SDRAM components to create a nondefective memory module or array.
BACKGROUND AND SUMMARY OF THE DISCLOSURE
As is well known in the art, during the production of monolithic memory devices from silicon wafers, some of the memory storage cells can become defective and unreliable. The defective cells can be the result of a number of causes, such as impurities introduced in the process of manufacturing the monolithic memory device from the silicon wafer, or localized imperfections in the silicon substrate itself.
Often, while some memory cells are defective, many other cells on the same memory chip are not defective, and will work reliably and accurately. In addition, it is often the case that the defective cells are localized and confined to particular outputs from the memory device. The remaining, nondefective outputs can be relied upon to provide a consistent and accurate representation of the information in the storage cell.
Techniques have been developed for salvaging the non-defective portions of defective
asynchronous
memory technologies (e.g., DRAM). Asynchronous memory technologies are relatively slow devices that operate in response to control signals generated by a memory controller, rather than in response to the system clock. The control signals allow the asynchronous memory device to operate at a speed that is much slower than the system clock, and that ensures reliable read and write memory operations.
Synchronous memory devices such as SDRAM, on the other hand, are much faster devices that operate on the system clock. SDRAM is an improvement over prior memory technologies principally because SDRAM is capable of synchronizing itself with the microprocessor's clock. This synchronization can eliminate the time delays and wait states often necessary with prior memory technologies (e.g., DRAM), and it also allows for fast consecutive read and write capability.
However, no attempts have been made to salvage non-defective portions of synchronous memory. Some people skilled in the art may believe that the use of techniques for salvaging defective memory devices would not work with higher-speed synchronous memory devices such as SDRAM because they operate at much higher speeds than previous memory devices, such as asynchronous DRAM. For SDRAM, it may be believed that the rate at which the clock input cycles and the load on the device driving the inputs (e.g., the clock and the address) to the SDRAM devices would make reliable input transitions unattainable.
The present invention addresses the problem of salvaging partially defective synchronous memory devices. In one embodiment of the present invention, multiple partially defective SDRAM components are configured to provide a reliable and nondefective memory module. Such an embodiment takes advantage of the manner in which defective cells are localized on each memory chip, and combines multiple memory chips to provide a memory bus that is of the desired width and granularity. In addition, it is possible with such an embodiment to provide a computer system in which the main memory is synchronized with the system clock, and is constructed, at least in part, from partially defective memory chips.
The nature of the present invention as well as other embodiments of the present invention may be more clearly understood by reference to the following detailed description of the invention, to the appended claims, and to the several drawings herein.
REFERENCES:
patent: 3714637 (1973-01-01), Beausoleil
patent: 3715735 (1973-02-01), Moss
patent: 3735368 (1973-05-01), Beausoleil
patent: 3772652 (1973-11-01), Hilberg
patent: 3781826 (1973-12-01), Beausoleil
patent: 3800294 (1974-03-01), Lawlor
patent: 3845476 (1974-10-01), Boehm
patent: 4355376 (1982-10-01), Gould
patent: 4376300 (1983-03-01), Tsang
patent: 4450560 (1984-05-01), Conner
patent: 4475194 (1984-10-01), LaVallee et al.
patent: 4479214 (1984-10-01), Ryan
patent: 4493075 (1985-01-01), Anderson et al.
patent: 4527251 (1985-07-01), Nibby, Jr. et al.
patent: 4646299 (1987-02-01), Schinabeck et al.
patent: 4807191 (1989-02-01), Flannagan
patent: 4837747 (1989-06-01), Dosaka et al.
patent: 4876685 (1989-10-01), Rich
patent: 4881200 (1989-11-01), Urai
patent: 4908798 (1990-03-01), Urai
patent: 4918662 (1990-04-01), Kondo
patent: 4935899 (1990-06-01), Morigami
patent: 4992984 (1991-02-01), Busch et al.
patent: 5051994 (1991-09-01), Bluethman
patent: 5060197 (1991-10-01), Park et al.
patent: 5124948 (1992-06-01), Takizawa et al.
patent: 5126973 (1992-06-01), Gallia et al.
patent: 5134584 (1992-07-01), Boler et al.
patent: 5200959 (1993-04-01), Gross et al.
patent: 5208775 (1993-05-01), Lee
patent: 5243570 (1993-09-01), Saruwatari
patent: 5251174 (1993-10-01), Hwang
patent: 5268866 (1993-12-01), Feng et al.
patent: 5270974 (1993-12-01), Reddy
patent: 5270976 (1993-12-01), Tran
patent: 5315552 (1994-05-01), Yoneda
patent: 5327380 (1994-07-01), Kersh, III et al.
patent: 5331188 (1994-07-01), Acovic et al.
patent: 5332922 (1994-07-01), Oguchi et al.
patent: 5337277 (1994-08-01), Jang
patent: 5349556 (1994-09-01), Lee
patent: 5371866 (1994-12-01), Cady
patent: 5379415 (1995-01-01), Papenberg et al.
patent: 5390129 (1995-02-01), Rhodes
patent: 5392247 (1995-02-01), Fujita
patent: 5400263 (1995-03-01), Rohrbaugh et al.
patent: 5400342 (1995-03-01), Matsumura et al.
patent: 5406565 (1995-04-01), MacDonald
patent: 5410545 (1995-04-01), Porter et al.
patent: 5424989 (1995-06-01), Hagiwara et al.
patent: 5434792 (1995-07-01), Saka et al.
patent: 5465234 (1995-11-01), Hannai
patent: 5469390 (1995-11-01), Sasaki et al.
patent: 5475648 (1995-12-01), Fujiwara
patent: 5475695 (1995-12-01), Caywood et al.
patent: 5491664 (1996-02-01), Phelan
patent: 5497381 (1996-03-01), O'Donoghue et al.
patent: 5502333 (1996-03-01), Bertin et al.
patent: 5513135 (1996-04-01), Dell et al.
patent: 5513327 (1996-04-01), Farmwald et al.
patent: 5528553 (1996-06-01), Saxena
patent: 5535328 (1996-07-01), Harari et al.
patent: 5538115 (1996-07-01), Koch
patent: 5539697 (1996-07-01), Kim et al.
patent: 5544106 (1996-08-01), Koike
patent: 5548553 (1996-08-01), Cooper et al.
patent: 5553231 (1996-09-01), Papenberg et al.
patent: 5576999 (1996-11-01), Kim et al.
patent: 5588115 (1996-12-01), Augarten
patent: 5600258 (1997-02-01), Graham et al.
patent: 5602987 (1997-02-01), Harari et al.
patent: 5631868 (1997-05-01), Termullo, Jr. et al.
patent: 5633826 (1997-05-01), Tsukada
patent: 5636173 (1997-06-01), Schaefer
patent: 5654204 (1997-08-01), Anderson
patent: 5668763 (1997-09-01), Fujioka et al.
patent: 5717694 (1998-02-01), Ohsawa
patent: 5734621 (1998-03-01), Ito
patent: 5745673 (1998-04-01), Di Zenzo et al.
patent: 5754753 (1998-05-01), Smelser
patent: 5758056 (1998-05-01), Barr
patent: 5768173 (1998-06-01), Seo et al.
patent: 5798962 (1998-08-01), Di Zenzo et al.
patent: 5841710 (1998-11-01), Larsen et al.
patent: 5862314 (1999-01-01), Jeddeloh
patent: 5896346 (1999-04-01), Dell et al.
patent: 5913020 (1999-06-01), Rohwer
patent: 5920512 (1999-07-01), Larsen
patent: 5920513 (1999-07-01), Jacobson
patent: 5956233 (1999-09-01), Yew et al.
patent: 5963463 (1999-10-01), Rondeau, II et al.
patent: 5966724 (1999-10-01), Ryan
patent: 5970008 (1999-10-01), Zagar et al.
patent: 5974564 (1999-10-01), Jeddeloh
patent: 5991215 (1999-11-01), Brunelle
patent: 5995409 (1999-11-01), Holland
patent: 5996096 (1999-11-01), Dell et al.
patent: 6009536 (1999-12-01), Rohwer
PC SDRAM Unbuffered DIMM Specification, Intel Corporation, pp. 1-47, Feb. 1998.*
PC SDRAM Specification, Intel Corporation, pp. 1-54, Oct.1998.*
Shanley, T. and D. Anderson, ISA System Architecture, Third Edition, pp. 126-132, 221-232, 1995, Copyright 1995 by MindShare, Inc.
Micron Electronics,Inc.—Assignee, U.S. App. S/N 09/035,629, Filed Mar. 5, 1998, “Recovery of Partially Defective Synchronous Memory Components.”
Micron Electronics, Inc.—Assignee, U.S. App. S/N
Larsen Corey
Weber Richard
Elisca Pierre Eddy
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Trammell James P.
LandOfFree
Recovery of useful areas of partially defective synchronous... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Recovery of useful areas of partially defective synchronous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Recovery of useful areas of partially defective synchronous... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2602440