Recovery of an anodically bonded glass device from a susstrate b

Details Recovery of an anodically bonded glass device from a susstrate b Recovery of an anodically bonded glass device from a susstrate b

1995-01-20

1996-07-23

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 12, 216 36, 216 24, 216 67, 1566571, H01L 2100, B44C 122

Patent

active

055381510

ABSTRACT:
A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membrane on which a metal interlayer is disposed. The metal interlayer and a glass device are anodically bonded together. Recovery of the glass device is accomplished by chemically and mechanically removing the wafer and its membrane from the metal interlayer. The membrane is preferably removed using reactive ion etching to which the metal interlayer is resistant. The metal interlayer is then removed from the glass device using a highly corrosive chemical solution. The recovered glass device may then be reused.

REFERENCES:
patent: 4994139 (1991-02-01), Biermann et al.
patent: 5023156 (1991-06-01), Takeuchi et al.
patent: 5101420 (1992-03-01), Kushibiki et al.
patent: 5154797 (1992-10-01), Blomquist et al.

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