Recovery of alignment marks and laser marks after chemical-mecha

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430 5, 430317, 430394, 430396, 438712, G03F 722, G03F 900

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active

057053200

ABSTRACT:
The preservation of alignment marks and identification marks throughout the multitude of processing steps employed for the manufacture of integrated circuit chips often requires the inclusion of additional operations which impact production cost and product throughput. Current increased utilization of global planarization operations such as chemical-mechanical-polishing have forced the inclusion of additional window opening lithographic steps requiring additional masks and etch operations to keep these marks from being obscured. This invention provides a technique and a reticle design for clearing and preserving alignment and wafer identification marks through planarization and metallization levels with improved throughput and without the need for additional reticles to clear the marks. The alignment mark areas are exposed by a large clear-out window located in the frame area of the contact/via reticle while the wafer identification marks are accommodated in the same fashion by the metal pattern reticle. The lithography for integrated circuit pattern exposure and the window exposure is accomplished by a single stepper pass at each level.

REFERENCES:
patent: 3402110 (1968-09-01), Scherrer
patent: 5401691 (1995-03-01), Caldwell
patent: 5403684 (1995-04-01), Schroeder et al.

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