Recessed tunnel oxide profile for improved reliability in...

Details Recessed tunnel oxide profile for improved reliability in... Recessed tunnel oxide profile for improved reliability in...

2005-08-23

2005-08-23

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257S353000

Reexamination Certificate

active

06933554

ABSTRACT:
An improved NAND-type memory cell structure having improved reliability and endurance. Since a high risk area for oxide breakdown and/or current leakage exists in the tunnel oxide layer, source/drain overlap region, the present invention provides a NAND-type memory cell fabricated using controlled formation of the tunnel oxide layer.

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patent: 5828099 (1998-10-01), Van Dort et al.
patent: 6097062 (2000-08-01), Gardner et al.
patent: 6429072 (2002-08-01), Tsukiji
patent: 6432762 (2002-08-01), Dalla Libera et al.
patent: HEI 5-55560 (1993-03-01), None

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