4. Static information storage and retrieval
  5. Floating gate
  6. Particular biasing

K. Michael Han

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Nand flash memory with specified gate oxide thickness

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Nonlinear stepped programming voltage

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Recessed tunnel oxide profile for improved reliability in...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Symmetrical program and erase scheme to improve erase time...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2076219

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