Recessed oxide method for making a silicon-on-insulator substrat

Details Recessed oxide method for making a silicon-on-insulator substrat Recessed oxide method for making a silicon-on-insulator substrat

1986-02-19

1987-11-03

Heller, Gregory A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156613, 156614, 156DIG64, 148DIG117, 148DIG159, 437 73, C30B 2304, C30B 2504, C30B 2520

Patent

active

047041862

ABSTRACT:
A plurality of first cavities is formed in the planar surface of a silicon substrate. A first oxide region of predetermined thickness is formed in each of the first cavities such that each of the first oxide regions has a surface which is coplanar with the substrate surface. A layer of monocrystalline silicon is then epitaxially deposited over the planar first oxide region/substrate surface. Second cavities are then formed through the monocrystalline silicon layer and into the substrate adjacent the first oxide regions, extending to a depth equal to approximately one-half that of the first oxide regions. The second cavities are then thermally oxidized so as to form second oxide regions therein, these second oxide regions being coplanar with the first oxide regions. Silicon is next epitaxially deposited on those portions of the monocrystalline silicon layer remaining on the first oxide regions so as to yield a continuous monocrystalline silicon sheet over the first and second oxide regions.

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patent: 4533429 (1985-08-01), Josquin
patent: 4549926 (1985-10-01), Corboy, Jr. et al.
patent: 4578142 (1986-03-01), Corboy et al.

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