Recessed gate dielectric antifuse

Details Recessed gate dielectric antifuse Recessed gate dielectric antifuse

2006-07-25

2010-11-16

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S281000, C438S306000, C438S589000, C438S591000, C438S703000, C257SE23147, C257SE21428

Reexamination Certificate

active

07833860

ABSTRACT:
A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

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