Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S401000, C257S622000, C257SE29134, C257SE29135
Reexamination Certificate
active
07323746
ABSTRACT:
A recess gate-type semiconductor device includes a gate electrode having a recessed portion at least partially covering a recess trench in an active region, and source/drain regions disposed in the active region that are separated by the gate electrode. The recess trench is separated from sidewalls of a device isolation region in a first direction and contacts sidewalls of the device isolation region in a second direction. The width of the recess trench of the active region in the second direction may be greater than the width of the source/drain regions in the second direction, and the recessed portion of the gate electrode may have tabs protruding in the first direction at its corners. Therefore, the semiconductor device has excellent junction leakage current and excellent refresh characteristics.
REFERENCES:
patent: 5559350 (1996-09-01), Ozaki et al.
patent: 6144081 (2000-11-01), Hsu et al.
patent: 2004/0135176 (2004-07-01), Kim
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patent: 2001-185701 (2001-07-01), None
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English language abstract of Korean Publication No. 2002-0041583, Jun. 3, 2002.
English language abstract of Korean Publication No. 2004-0013460, Feb. 14, 2004.
English language abstract of Korean Publication No. 2005-0002074, Jan. 7, 2005.
English language abstract of Korean Publication No. 58-027363, Feb. 18, 2003.
English language abstract of Korean Publication No. 2001-185701, Jul. 6, 2001.
Kim Dong-Hyun
Lee Chang-Sub
Paik Jae-Choel
Park Won-mo
Song Du-Heon
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Warren Matthew E.
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