Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-11
2009-06-30
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S225000, C438S259000, C438S270000, C257SE21429, C257SE21553
Reexamination Certificate
active
07553717
ABSTRACT:
A PMOS transistor and a method for fabricating a PMOS transistor. The method may include providing a semiconductor wafer having a PMOS transistor gate stack, source/drain extension regions, and active regions. The method may also include forming epi sidewalls, performing a ex-situ recess etch, and performing an in-situ recess etch. The ex-situ recess etch and the in-situ recess etch form recessed active regions. The PMOS transistor is formed by a method using ex-situ and in-situ etch and has epitaxial SiGe regions with a greatest width at the surface of the semiconductor wafer.
REFERENCES:
patent: 5559053 (1996-09-01), Choquette et al.
patent: 5858857 (1999-01-01), Ho
patent: 6165870 (2000-12-01), Shim et al.
patent: 6562696 (2003-05-01), Hsu et al.
patent: 2003/0098479 (2003-05-01), Murthy et al.
patent: 2004/0092114 (2004-05-01), Lee
patent: 2004/0262683 (2004-12-01), Bohr et al.
patent: 2005/0118793 (2005-06-01), Snyder et al.
patent: 2005/0148147 (2005-07-01), Keating et al.
patent: 2006/0088968 (2006-04-01), Shin et al.
patent: 2006/0115949 (2006-06-01), Zhang et al.
patent: 2006/0240630 (2006-10-01), Bauer et al.
patent: 2007/0023847 (2007-02-01), Rhee et al.
patent: 2007/0072353 (2007-03-01), Wu et al.
patent: 2007/0105331 (2007-05-01), Murthy et al.
patent: 2007/0249168 (2007-10-01), Rotondaro et al.
patent: 2008/0242032 (2008-10-01), Chakravarthi et al.
Chakravarthi Srinivasan
Chidambaram Periannan
Weijtmans Johan
Brady III Wade J.
Keagy Rose Alyssa
Nguyen Duy T
Pham Thanh V
Telecky , Jr. Frederick J.
LandOfFree
Recess etch for epitaxial SiGe does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Recess etch for epitaxial SiGe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Recess etch for epitaxial SiGe will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4092779