Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-01-25
2011-01-25
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S775000, C257SE21108
Reexamination Certificate
active
07875534
ABSTRACT:
A method of forming a semiconductor structure includes providing a substrate; forming a buffer
ucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer
ucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
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Chen Ding-Yuan
Chiou Wen-Chih
Yu Chen-Hua
Yu Chia-Lin
Coleman W. David
Enad Christine
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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