Real time monitoring of plasma etching process

Details Real time monitoring of plasma etching process Real time monitoring of plasma etching process

1998-06-03

2000-09-12

Dunn, Tom

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 59, 156345, G01L 2130

Patent

active

061173487

ABSTRACT:
Real time monitoring of a plasma etching process is performed by monitoring the intensity of a specific wavelength created by the plasma. Changes in the intensity of the plasma wavelength indicate the end-point in time for the process. The end-point value is compared with one or more reference values to determine whether the etching process is stable. End-point values outside of a pre-selected range of values is indicative of unstable processing conditions, thus allowing termination of the etching process before unstable conditions can result in substantial scrap.

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