Reading pre-charge circuit for integrated circuit memory

Details Reading pre-charge circuit for integrated circuit memory Reading pre-charge circuit for integrated circuit memory

1991-08-19

1993-09-28

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

36518901, C11C 1300

Patent

active

052491536

ABSTRACT:
In order to improve the access time, in reading mode, to the information elements contained in an integrated circuit memory, especially electrically programmable memories such as EPROMs, a circuit for pre-charging the bit line is used and the build-up speed of the potential of the bit line is increased by making a transistor conductive during the pre-charging stage. This transistor is also designed to applying a programming potential Vpp during the stage for programming of the memory.

REFERENCES:
patent: 4289982 (1981-09-01), Smith
patent: 5007026 (1991-04-01), Gaultier et al.
patent: 5121356 (1992-06-01), Park et al.

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