Read-preferred SRAM cell design

Details Read-preferred SRAM cell design Read-preferred SRAM cell design

2008-08-29

2010-11-02

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189110, C365S226000

Reexamination Certificate

active

07826252

ABSTRACT:
A method for operating a static random access memory (SRAM) cell includes providing the SRAM cell having a static read margin and a static write margin, wherein the static read margin is greater than the static write margin; applying a dynamic power to perform a write operation on the SRAM cell; and applying a static power to perform a read operation on the SRAM cell.

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Seevinck, E., et al., “Static-Noise Margin Analysis of MOS SRAM Cells,” IEEE Journal of Solid-State Circuits, Oct. 1987, pp. 748-754, vol. SC-22, No. 5, IEEE.
Ichikawa, T., et al., “A New Analytical Model of SRAM Cell Stability in Low-Voltage Operation,” IEEE Transactions on Electron Devices, Jan. 1996, pp. 54-61, vol. 43, No. 1, IEEE.

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