Read-only-memory process with self-aligned coding

Details Read-only-memory process with self-aligned coding Read-only-memory process with self-aligned coding

1995-12-22

1997-09-09

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218246

Patent

active

056656211

ABSTRACT:
A process of fabricating a read-only-memory using a self-aligned technique for coding. By forming cap layers on word lines and forming stoppers between the stacked word lines/cap layers, sufficient tolerance for coding mask misalignment can be provided to ensure the alignment of coding even when misalignment happens. Therefore the problem of partially turned-off adjacent memory cells is eliminated.

REFERENCES:
patent: 5472898 (1995-12-01), Hong et al.
patent: 5523251 (1996-06-01), Hong et al.

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