Read-only memory device

Details Read-only memory device Read-only memory device

1994-03-07

1996-01-09

Limanek, Robert P.

Static information storage and retrieval

Systems using particular element

Semiconductive

365184, 257378, 257382, 257390, G11C 1134

Patent

active

054834830

ABSTRACT:
A semiconductor memory device includes a current driving transistor composed of a bipolar transistor which is coupled to a corresponding bit line for increasing the bit line current. The collector of the current driving transistor is constituted by a well coupled to ground and the base is constituted by a common drain region of two adjacent string selecting transistors. The emitter of the current driving transistor is a separate polysilicon layer disposed from among a first interlayer insulating layer and a second interlayer insulating layer and the emitter is coupled to both the base region and the bit line through contact holes. Otherwise, the emitter of the current driving transistor is a doping region formed in the base region which serves as the common drains of two adjacent string selecting transistor.
The memory device has the effect that the operation speed is increased and the integration density can be increased, so as to reduce the cost thereof.

REFERENCES:
patent: 4648074 (1987-03-01), Pollachek
patent: 4868628 (1989-09-01), Simmons
patent: 5101257 (1992-03-01), Hayden et al.
patent: 5101262 (1992-03-01), Ariizumi et al.
patent: 5363325 (1994-11-01), Sunouchi et al.

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