Read-only memory and corresponding method of manufacturing by MO

Details Read-only memory and corresponding method of manufacturing by MO Read-only memory and corresponding method of manufacturing by MO

1997-10-31

1999-10-19

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 248246

Patent

active

059703482

ABSTRACT:
In a method for the manufacture of cells of a read-only memory, each cell comprises a MOS transistor formed by a first diffusion and a second diffusion of impurities of a first type in a semiconductor substrate with impurities of a second type. These two diffusions are separated by a channel surmounted by a gate. A thick oxide zone is made in the zone designed for the first diffusion, so that the making of the diffusions leads to a first diffusion in two parts separated by this thick oxide zone, a first part adjoining the channel and a second part on the periphery of the transistor. A particular encoding step makes it possible, by means of a mask, to eliminate the thick oxide in certain cells so that these encoded cells have a first continuous diffusion.

REFERENCES:
patent: 4683641 (1987-08-01), Ravindhran et al.
patent: 5472898 (1995-12-01), Hong et al.
patent: 5480823 (1996-01-01), Hsu
patent: 5504030 (1996-04-01), Chung et al.
patent: 5529942 (1996-06-01), Hong et al.
patent: 5683925 (1997-11-01), Irani et al.

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