Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-15
1999-04-20
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438276, H01L 218234
Patent
active
058952420
ABSTRACT:
A read-only memory (ROM) and method for manufacturing a ROM having trench-type gate regions and source/drain regions, wherein the trench-type gate regions are provides in a substrate. The ROM further includes an insulating layer for isolating the substrate from the source/drain regions so to prevent current leakage between the source/drain regions and the substrate and to reduce area required by components of the ROM, thereby increasing component integration. The ROM also comprises a checkerboard conductive layer having a plurality of parallel source/drain regions a plurality of parallel channel regions connected to the plurality of parallel source/drain regions, wherein the plurality of parallel source/drain regions and the plurality of parallel channel regions cross each other at right angle, while the source/drain regions and the trench-type gate regions are approximately parallel to each other.
REFERENCES:
patent: 4818717 (1989-04-01), Johnson et al.
patent: 5602049 (1997-02-01), Wen et al.
patent: 5668031 (1997-09-01), Hsue et al.
Chang Joni
United Microelectronics Corp.
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