Read control circuit in a read only memory system

Static information storage and retrieval – Read/write circuit – Precharge

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365189, G11C 700

Patent

active

045920273

ABSTRACT:
A read control circuit for a read only memory implemented with MOSFETs includes a primary address line for selecting a desired memory cell group, and a secondary address line for selecting a desired data read line in the selected memory cell group. The thus selected data read line is charged to a desired level. Then, an address signal is applied to a desired row address line, whereby a discharging current representing the memory state flows through the selected memory cell and the data read line.

REFERENCES:
patent: 3909631 (1975-09-01), Kitagawa
patent: 4262342 (1981-04-01), Tuan

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