Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-10-24
2006-10-24
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S230080
Reexamination Certificate
active
07126860
ABSTRACT:
Program column latch circuitry of nonvolatile memory is provided with read-back capability to verify that data bits have been correctly loaded into the latch circuits and written to the memory cells. The interface between the low voltage latches and the external input and output data paths is provided with opposite-facing tri-state buffers that allow latched data to be read out for comparison and verification. Writing of latched data to memory cells can be verified by the read-back without needing any external RAM.
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Bour Laureline
Merandat Marc
Pratlong Jerome
Ricard Stephane
Vergnes Sylvie B.
Atmel Corporation
Le Thong Q.
Protsik Mark
Schneck Thomas
Schneck & Schneck
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