Reactor precoating for reduced stress and uniform CVD

Details Reactor precoating for reduced stress and uniform CVD Reactor precoating for reduced stress and uniform CVD

2005-12-13

2005-12-13

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S255394

Reexamination Certificate

active

06974781

ABSTRACT:
A method is provided for obtaining stable and elevated deposition rates in a reaction chamber, following the cleaning of the chamber. The method involves cleaning of the chamber, pre-coating the interior surfaces of the reaction chamber with an inorganic composition, and then, using the pre-coated chamber to deposit an organic layer onto a workpiece.

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