Reactor design for reduced particulate generation

Details Reactor design for reduced particulate generation Reactor design for reduced particulate generation

2008-09-23

2008-09-23

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C257SE21077, C257SE21516

Reexamination Certificate

active

11251546

ABSTRACT:
Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings. The spacing of the channel walls to the flange can be varied to vary the amount of thermal contact and cooling achieved using the channels.

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