Reactor chamber self-cleaning process

Details Reactor chamber self-cleaning process Reactor chamber self-cleaning process

1991-10-10

1992-10-27

Jones, W. Gary

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 134 1, 20429831, 20429833, B08B 700, C23F 112, H01L 21306

Patent

active

051586444

ABSTRACT:
A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C.sub.2 F.sub.6 in combination with oxygen. The two-step process involves, first, a chamber-wide etch at relatively low pressure and with relatively large separation between the gas inlet manifold and the wafer supports which are the RF electrodes and, second, a local etch step which uses a relatively high chamber pressure and smaller electrode spacing, to complete the cleaning of the RF electrodes.

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Patent Abstracts of Japan, vol. 13, No. 251, Jun., 1989.
Patent Abstracts of Japan, vol. 13, No. 388, Aug., 1989.

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