Reactive preclean prior to metallization for sub-quarter...

Details Reactive preclean prior to metallization for sub-quarter... Reactive preclean prior to metallization for sub-quarter...

2005-06-14

2005-06-14

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S906000

Reexamination Certificate

active

06905965

ABSTRACT:
The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.

REFERENCES:
patent: 5043299 (1991-08-01), Chang et al.
patent: 5236868 (1993-08-01), Nulman
patent: 5712207 (1998-01-01), Lee et al.

Affiliated with

Also associated with

Rating

Reactive preclean prior to metallization for sub-quarter... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactive preclean prior to metallization for sub-quarter..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive preclean prior to metallization for sub-quarter... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3510647