Reactive plasma etch cleaning of high aspect ratio openings

Details Reactive plasma etch cleaning of high aspect ratio openings Reactive plasma etch cleaning of high aspect ratio openings

1999-04-22

2000-08-29

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 12, 216 67, 216 79, 438719, H01L 2100

Patent

active

061108367

ABSTRACT:
Native oxides can be removed from a substrate having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with oxygen to produce very volatile oxygen-containing species that can be readily removed through the exhaust system of the plasma chamber, preventing re-deposition of oxides on the surface of the substrate or on the sidewalls or bottom of the openings. When the substrate is mounted in a plasma chamber having dual power sources that can form a plasma above the substrate and can apply bias to the substrate, tapered openings are formed rapidly that can be readily filled without forming voids.

REFERENCES:
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5413670 (1995-05-01), Langan et al.
patent: 5662814 (1997-09-01), Sugino
patent: 5888906 (1999-03-01), Sandhu et al.

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