Reactive ion etch process including hydrogen radicals

Details Reactive ion etch process including hydrogen radicals Reactive ion etch process including hydrogen radicals

1992-01-29

1993-09-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 156345, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

052425380

ABSTRACT:
The addition of a gaseous source of hydrogen radicals, such as hydrogen, ammonia or methane to oxide RIE etching chemistries, in amounts of from about 5 to about 20 percent by volume of the total gas flow, will increase the oxide etch rate while suppressing the polysilicon etch rate. This effect is more pronounced at lower wafer temperatures. This new process chemistry increases the oxide etch rate to greater than 5000 .ANG./min., improves the selectivity to polysilicon to greater than 25:1 and improves the selectivity to photoresist to greater than 6:1, without having a significant detrimental effect on the profile angle, the RIE lag and the etch rate uniformity. Selectivities of 50:1 have been achieved with less than 15% RIE lag using the chemistry CHF.sub.3, Ar, CF.sub.4 and NH.sub.3, with NH.sub.3 constituting 10 percent by volume of the gas flow.

REFERENCES:
patent: 4283249 (1981-08-01), Ephrath
patent: 4324611 (1982-04-01), Vogel et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4687543 (1987-08-01), Bowker
patent: 4734157 (1988-03-01), Carbaugh et al.
patent: 4857140 (1989-08-01), Loewenstein
patent: 5021121 (1991-06-01), Groechel et al.

Affiliated with

Also associated with

Rating

Reactive ion etch process including hydrogen radicals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactive ion etch process including hydrogen radicals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive ion etch process including hydrogen radicals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-484845