Semiconductor device manufacturing: process – Chemical etching
Patent
1997-06-09
1999-05-18
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
438712, 438689, 438695, 438697, 438733, 438738, H01L21/46
Patent
active
059045663
ABSTRACT:
A method for forming a via through a nitrogenated silicon oxide layer. There is first provided a substrate. There is then formed over the substrate a nitrogenated silicon oxide layer. There is then formed upon the nitrogenated silicon oxide layer a patterned photoresist layer. Finally, there is then etched the nitrogenated silicon oxide layer through a reactive ion etch (RIE) plasma etch method while employing the patterned photoresist layer as a patterned photoresist etch mask layer to form a via through the nitrogenated silicon oxide layer. The reactive ion etch (RIE) method employs an etchant gas composition comprising: (1) a perfluorocarbon having a carbon:fluorine atomic ratio at least about 1:3; (2) oxygen; and (3) argon.
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Tao Hun-Jan
Tsai Chia-Shiung
Ackerman Stephen B.
Bowers Charles
Nguyen Thanh
Saile George O.
Szecsy Alek P.
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