Reactive ion etch chemistry for providing deep vertical trenches

Details Reactive ion etch chemistry for providing deep vertical trenches Reactive ion etch chemistry for providing deep vertical trenches

1986-10-09

1988-01-05

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156648, 156651, 1566591, 156662, 252 792, B44C 122, H01L 21308

Patent

active

047174480

ABSTRACT:
A process for forming deep (>6.mu.m) trenches in a silicon substrate. The substrate is etched through a silicon oxide mask in a plasma having 75%-86% HCl, 9%-16% O.sub.2, and 1%-8% BCl.sub.3. The resulting trenches have substantially vertical sidewalls and rounded bottom surfaces. The plasma etch is performed at high power and low pressure, so that it achieves a high aspect ratio at a minimum etch bias.

REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4417947 (1983-11-01), Pan
patent: 4450042 (1984-05-01), Purdes
patent: 4475982 (1984-10-01), Lai et al.
patent: 4533430 (1985-08-01), Bower
patent: 4561907 (1985-12-01), Raicu
patent: 4569718 (1986-02-01), Butherus et al.
patent: 4589952 (1986-05-01), Behringer et al.
patent: 4613400 (1986-09-01), Tam et al.
P. M. Schaible et al., "Reactive Ion Etching of Silicon," IBM Technical Disclosure Bulletin, vol. 22, No. 5, Oct. 1979, p. 1819.

Affiliated with

Also associated with

Rating

Reactive ion etch chemistry for providing deep vertical trenches does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reactive ion etch chemistry for providing deep vertical trenches, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reactive ion etch chemistry for providing deep vertical trenches will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-7381