Reaction apparatus for atomic layer deposition

Details Reaction apparatus for atomic layer deposition Reaction apparatus for atomic layer deposition

2006-09-12

2006-09-12

Lund, Jeffrie R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

C118S712000, C118S713000, C118S719000

Reexamination Certificate

active

07105059

ABSTRACT:
A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas, which is input through the gas flow path, reacts with a specimen in the reaction chamber, the reactor further including a gas distributor, which is located in the reaction chamber to evenly supply the gas; a specimen location controller for moving the specimen located in the vacuum chamber to the reaction chamber; and an analyzer, which is connected to the reaction chamber, for analyzing a second gas generated in the reaction chamber. The apparatus is able to deposit uniform atomic layers on a specimen by maintaining the pressure and flow of reactant gas and can deposit and analyze an atomic layer simultaneously.

REFERENCES:
patent: 5078840 (1992-01-01), Ogawa et al.
patent: 5223001 (1993-06-01), Saeki
patent: 5277747 (1994-01-01), Aspnes
patent: 5456945 (1995-10-01), McMillan et al.
patent: 5651867 (1997-07-01), Kokaku et al.
patent: 5653808 (1997-08-01), MacLeish et al.
patent: 5665214 (1997-09-01), Iturralde
patent: 5695564 (1997-12-01), Imahashi
patent: 5753320 (1998-05-01), Mikoshiba et al.
patent: 5776254 (1998-07-01), Yuuki et al.
patent: 5891251 (1999-04-01), MacLeish et al.
patent: 6015595 (2000-01-01), Felts
patent: 6085689 (2000-07-01), Sandhu et al.
patent: 6090209 (2000-07-01), Strodtbeck et al.
patent: 6098568 (2000-08-01), Raoux et al.
patent: 6113984 (2000-09-01), MacLeish et al.
patent: 6156151 (2000-12-01), Komino et al.
patent: 6190459 (2001-02-01), Takeshita et al.
patent: 6267840 (2001-07-01), Vosen
patent: 6344084 (2002-02-01), Koinuma et al.
patent: 6409837 (2002-06-01), Hillman
patent: 6472299 (2002-10-01), Hiraoka et al.
patent: 6531069 (2003-03-01), Srivastava et al.
patent: 6539890 (2003-04-01), Felts
patent: 6617095 (2003-09-01), Kitano et al.
patent: 6709523 (2004-03-01), Toshima et al.
patent: D490450 (2004-05-01), Hayashi et al.
patent: D496008 (2004-09-01), Takahashi et al.
patent: 6821910 (2004-11-01), Adomaitis et al.
patent: 2001/0053530 (2001-12-01), Klein et al.
patent: 2003/0221708 (2003-12-01), Ly et al.
patent: 2004/0007179 (2004-01-01), Lee et al.
patent: 2004/0266011 (2004-12-01), Lee et al.
patent: 55-158623 (1980-12-01), None
patent: 01-301585 (1989-12-01), None
patent: 05-179426 (1993-07-01), None
Jeffrey Elam, Growth and Characterization of A12o3/ZnO, etc . . . , Department of Chemistry Univ. of Colorado.
Chung et al., Novel MIS-Ta2O5/TiO2 Capacitor, etc . . . May 15, 2001., Samsung Electronics Co., Ltd.

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