Reacted conductive gate electrodes

Details Reacted conductive gate electrodes Reacted conductive gate electrodes

2006-01-03

2006-01-03

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

C257S200000

Reexamination Certificate

active

06982474

ABSTRACT:
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

REFERENCES:
patent: 4755478 (1988-07-01), Abernathey et al.
patent: 5496771 (1996-03-01), Cronin et al.
patent: 5714777 (1998-02-01), Ismail et al.
patent: 5844260 (1998-12-01), Ohori
patent: 5847419 (1998-12-01), Imai et al.
patent: 5877535 (1999-03-01), Matsumoto
patent: 5891769 (1999-04-01), Liaw et al.
patent: 5998807 (1999-12-01), Lustig et al.
patent: 6121100 (2000-09-01), Andideh et al.
patent: 6132806 (2000-10-01), Dutartre
patent: 6187657 (2001-02-01), Xiang et al.
patent: 6214679 (2001-04-01), Murthy et al.
patent: 6246077 (2001-06-01), Kobayashi et al.
patent: 6291321 (2001-09-01), Fitzgerald
patent: 6313486 (2001-11-01), Kencke et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6410371 (2002-06-01), Yu et al.
patent: 6486520 (2002-11-01), Okuno et al.
patent: 6498359 (2002-12-01), Schmidt et al.
patent: 6503833 (2003-01-01), Ajmera et al.
patent: 6509587 (2003-01-01), Sugiyama et al.
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6573126 (2003-06-01), Cheng et al.
patent: 6593641 (2003-07-01), Fitzergald
patent: 2002/0052084 (2002-05-01), Fitzgerald
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: WO 02/13262 (2002-02-01), None
Ponomarev et al., “High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates,”IEEE Transactions on Electron Devices, vol. 47, No. 4, Apr. 2000, pp. 848-855.
Jungemann et al., “Full-Band Monte Carlo Simulation of a 0.12μm-Si-PMOSFET with and without a Strained SiGe-Channel”,IEEE Electron Devices Meeting, 1998, pp. 897-900.
King et al., “A Polycrystalline Si1-xGex-Gate CMOS Technology”,IEEE, Volume, No., 1990, pp. 253-256.
Ku et al., “High Performance pMOSFETs with Ni(SixGe1-x)/Poly-Si0.8Ge0.2Gate”,IEEE International Electron Devices Meeting, 1990, pp. 253-256.
Maiti et al., “Strained-Si Heterostructure Field Effect Transistors”,Semiconductor Science Technology, vol. 13, No. 11, 1998, pp. 1225-1246.
O'Neill et al., “Si-Ge Virtual Substrate N-channel Heterojunction MOSFETs”,Semiconductor Science Technology, vol. 14, No. 9, 1999, pp. 784-789.
Yasuda et al., “Interfacial Reactions of Ti/ and Zr/Si1-xGex/Si Contacts with Rapid Thermal Annealing”,Thin Solid Films, Volume/No. 373, 2000, pp. 73-78.
International Search report for International Patent Application No. PCT/US03/19528, dated Jun. 20, 2003, 9 pages.

Affiliated with

Also associated with

Rating

Reacted conductive gate electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reacted conductive gate electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reacted conductive gate electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3544745