Coating apparatus – Gas or vapor deposition
Patent
1989-05-19
1990-05-29
Bueker, Richard
Coating apparatus
Gas or vapor deposition
118730, 156611, 4272481, C23C 1600
Patent
active
049286269
ABSTRACT:
An epitaxial reactor system provides for enhanced gas flow control and, thus, deposition uniformity. Gross reactant gas flow is set by a main flow controller which delivers unequal amounts to a reaction chamber via two nozzle assemblies. A supplemental flow controlled by an auxiliary flow controller is used to balance the flow rates through the nozzle assemblies so as to reduce spiralling of the gas flow within the chamber. Vertical ridges on a shroud within the reaction chamber help guide incoming gases vertically, further minimizing spiralling. The direction of gas flow from each nozzle assembly is controlled by two actuators, one controlling orientation along a coarse diagonal to obtain an overall vertical uniformity of deposition; the other actuator controls orientation along a fine diagonal to balance inter- and intra-wafer deposition uniformity. This arrangement optimizes the convenience in attaining vertical uniformity. Within each nozzle assembly, a nozzle includes an apertured ball which pivots between two TEFLON rings which are urged against the ball by a lock nut. The compression and frictional forces are adjusted so that a nozzle orientation can be maintained while allowing orientation to be changed by applying force through the actuators. This avoids having to disassemble components to reorient the nozzles.
REFERENCES:
patent: 4649859 (1987-03-01), Wanlass
Carlson David K.
Lindstrom Paul R.
Anderson Clifton
Applied Materials Inc.
Bueker Richard
Hickman Paul L.
Owens Terry J.
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