Rapid thermal anneal with a gaseous dopant species

Details Rapid thermal anneal with a gaseous dopant species Rapid thermal anneal with a gaseous dopant species

1997-12-18

2000-09-26

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438535, 438696, 438763, H01L 21336

Patent

active

06124175&

ABSTRACT:
Rapid thermal anneal with a gaseous dopant species is disclosed. In one embodiment, a method includes three steps. In the first step, at least one gate is formed over a semiconductor substrate. In the second step, at least one spacer for each of the gates is formed, where each spacer is adjacent to an edge of its corresponding gate. In the third step, a rapid thermal anneal with a gaseous dopant species is performed to form source and drain regions within the substrate. Desirably, the source and drain regions meet the substrate underneath the gate at shallow junctions.

REFERENCES:
patent: 5006477 (1991-04-01), Farb
patent: 5234850 (1993-08-01), Liao
patent: 5387545 (1995-02-01), Kiyota et al.
patent: 5489550 (1996-02-01), Moslehi
patent: 5569624 (1996-10-01), Weiner
patent: 5599735 (1997-02-01), Moslehi
patent: 5866472 (1999-02-01), Moslehi
patent: 5930617 (1999-07-01), Wu
patent: 5937301 (1999-08-01), Gardner et al.
patent: 5956584 (1999-09-01), Wu
patent: 5994175 (1999-11-01), Gardner et al.

Affiliated with

Also associated with

Rating

Rapid thermal anneal with a gaseous dopant species does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Rapid thermal anneal with a gaseous dopant species, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Rapid thermal anneal with a gaseous dopant species will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099474