Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-01-17
2008-09-09
Mai, Son L (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185120, C365S185330, C365S189200
Reexamination Certificate
active
07423915
ABSTRACT:
A non-volatile memory, such as a Flash memory, is configured to perform a random multi-page read operation. The memory may include a core array of non-volatile memory cells and input lines for receiving an indication of the random multi-page read operation. Further, the memory may include a multi-level volatile memory coupled to the core array that is configured to simultaneously process multiple pages of data from the core array in a pipelined manner. Output lines are coupled to the multi-level volatile memory and output the pages of data from the memory device.
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Chandra Sachit
Chen Hounien
Leong Nancy
Harrity & Snyder LLP
Mai Son L
Spansion LLC
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