Random cache read using a double memory

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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Details

C365S185120, C365S185330, C365S189200

Reexamination Certificate

active

07423915

ABSTRACT:
A non-volatile memory, such as a Flash memory, is configured to perform a random multi-page read operation. The memory may include a core array of non-volatile memory cells and input lines for receiving an indication of the random multi-page read operation. Further, the memory may include a multi-level volatile memory coupled to the core array that is configured to simultaneously process multiple pages of data from the core array in a pipelined manner. Output lines are coupled to the multi-level volatile memory and output the pages of data from the memory device.

REFERENCES:
patent: 5280594 (1994-01-01), Young et al.
patent: 5973989 (1999-10-01), Pawlowski
patent: 6154808 (2000-11-01), Nagase et al.
patent: 6178479 (2001-01-01), Vishin
patent: 6282624 (2001-08-01), Kimura et al.
patent: 6304510 (2001-10-01), Nobunaga et al.
patent: 6374337 (2002-04-01), Estakhri
patent: 6377500 (2002-04-01), Fujimoto et al.
patent: 6377507 (2002-04-01), Tsao
patent: 6388908 (2002-05-01), Araki et al.
patent: 6412080 (2002-06-01), Fleming et al.
patent: 6622201 (2003-09-01), VanBuskirk et al.
patent: 7050337 (2006-05-01), Iwase et al.
patent: 7062619 (2006-06-01), Dvir et al.
patent: 7123521 (2006-10-01), Louie et al.
patent: 7212440 (2007-05-01), Gorobets
patent: 7215580 (2007-05-01), Gorobets
patent: 2002/0041527 (2002-04-01), Tanaka et al.
patent: 2002/0130334 (2002-09-01), Gastaldi et al.
patent: 2003/0067808 (2003-04-01), Tuan et al.
patent: 2003/0076719 (2003-04-01), Byeon et al.
patent: 2003/0117861 (2003-06-01), Maayan et al.
patent: 2004/0062080 (2004-04-01), Kato
patent: 2004/0133755 (2004-07-01), Chambers
patent: 2005/0226046 (2005-10-01), Lee et al.
patent: 2005/0257120 (2005-11-01), Gorobets et al.
patent: 2006/0245247 (2006-11-01), Yano et al.
patent: 2006/0245270 (2006-11-01), Louie et al.
patent: 2007/0064480 (2007-03-01), Kuo et al.
patent: 2007/0097774 (2007-05-01), Mitani et al.
patent: 1 223 586 (2002-07-01), None
patent: 1 513 160 (2005-03-01), None
patent: WO 00/30116 (2000-05-01), None
Co-pending U.S. Appl. No. 11/189,923, filed Jul. 27, 2005; entitled: “Improved Read Mode for Flash Memory”, by Hounien Chen et al., 25 pages.
2002 IEEE International Solid-State Circuits Conference, Session 6, “SRAM and Non-Volatile Memories”, Feb. 4, 2004, 6 pages.
2002 IEEE International Solid-State Circuits Conference, 23 pages.
International Search Report for corresponding PCT Application No. PCT/US2006/046397.

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