Random access memory with resistance to crystal lattice memory e

Details Random access memory with resistance to crystal lattice memory e Random access memory with resistance to crystal lattice memory e

1986-08-26

1988-07-26

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365184, 357 45, G11C 700, G11C 1134, H01L 2710, H01L 2715

Patent

active

047605600

ABSTRACT:
A random access memory comprises a semiconductor body of one conductivity type, at least one first well region of an opposite conductivity type formed in the surface area of the semiconductor body, and a memory cell array having a plurality of memory cells formed in the first well region. A peripheral circuit for driving the memory cell array is formed in at least one second well region of the opposite conductivity type formed separately from the first well region in the surface area of the semiconductor body. The second well region is set at a bias level deeper than the first well region.

REFERENCES:
patent: 3836894 (1974-09-01), Cricchi
patent: 4472792 (1984-09-01), Shimohigashi et al.
patent: 4577211 (1986-03-01), Bynum et al.
patent: 4612461 (1986-09-01), Sood
patent: 4636985 (1987-01-01), Aoki et al.

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