Static information storage and retrieval – Read/write circuit – Precharge
Patent
1992-04-08
1994-06-14
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Precharge
36523003, G11C 700
Patent
active
053216571
ABSTRACT:
In a dynamic RAM of a CSL system, a memory array is divided into a plurality of memory array portions, and bit line pairs provided in the respective memory array portions are connected to their corresponding I/O line pairs simultaneously in response to a CSL output. In such an RAM, only the I/O line pair of a memory array portion to be accessed is precharged to the level of V.sub.CC -V.sub.th, while the I/O line pair of a memory array portion not to be accessed is precharged to the level of 1/2.multidot.V.sub.CC which is the same level as the bit line pairs. This makes it possible to achieve a faster data reading operation and also prevent unnecessary currents from flowing between the bit line pairs and the I/O line pair in the unaccessed memory array portion.
REFERENCES:
patent: 4112512 (1978-09-01), Arzubi et al.
patent: 4658381 (1987-04-01), Reed et al.
patent: 4926384 (1990-05-01), Roy
patent: 4996671 (1991-02-01), Suzuki et al.
patent: 5047984 (1991-09-01), Monden
"An Experimental 1Mb DRAM with On-Chip Voltage Limiter", by K. Itoh et al, Digest of Technical Papers, 1984 IEEE International Solid-State Circuits Conference, p. 282.
Arimoto Kazutami
Fujishima Kazuyasu
Hidaka Hideto
Ohishi Tsukasa
Tsukude Masaki
Dinh Son
LaRoche Eugene R.
Mitsubishi Denki & Kabushiki Kaisha
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