Random access memory including first and second voltage sources

Details Random access memory including first and second voltage sources Random access memory including first and second voltage sources

2007-12-25

2007-12-25

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189110

Reexamination Certificate

active

11236933

ABSTRACT:
A random access memory including first memory cells, second memory cells, a first voltage source, and a second voltage source. The first voltage source is configured to control the first memory cells. The second voltage source is configured to control the second memory cells. Also, the first voltage source is configured to be trimmed independently of the second voltage source to provide a first voltage that reduces leakage from the first memory cells and the second voltage source is configured to be trimmed independently of the first voltage source to provide a second voltage that reduces leakage from the second memory cells.

REFERENCES:
patent: 5673223 (1997-09-01), Park
patent: 5703827 (1997-12-01), Leung et al.
patent: 6341087 (2002-01-01), Kunikiyo
patent: 6343044 (2002-01-01), Hsu et al.
patent: 6370069 (2002-04-01), Brass et al.
patent: 2004/0046188 (2004-03-01), Itoh et al.
patent: 2005/0018483 (2005-01-01), Imamiya et al.
patent: 2007/0041232 (2007-02-01), Zimlich

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