Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-11-01
2005-11-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C201S045000, C201S045000
Reexamination Certificate
active
06961276
ABSTRACT:
A random access memory circuit comprises a plurality of memory cells and at least one decoder coupled to the memory cells, the decoder being configurable for receiving an input address and for accessing one or more of the memory cells in response thereto. The random access memory circuit further comprises a plurality of sense amplifiers operatively coupled to the memory cells, the sense amplifiers being configurable for determining a logical state of one or more of the memory cells. A controller coupled to at least a portion of the sense amplifiers is configurable for selectively operating in at least one of a first mode and a second mode. In the first mode of operation, the controller enables one of the sense amplifiers corresponding to the input address and disables the sense amplifiers not corresponding to the input address. In the second mode of operation, the controller enables substantially all of the sense amplifiers. The memory circuit advantageously provides an adaptable latency by controlling the mode of operation of the circuit.
REFERENCES:
patent: 5835934 (1998-11-01), Tran
patent: 5848428 (1998-12-01), Collins
patent: 6021461 (2000-02-01), Dhong et al.
patent: 6076140 (2000-06-01), Dhong et al.
patent: 6314051 (2001-11-01), Farmwald et al.
patent: 6412059 (2002-06-01), Matsuyama
patent: 6687789 (2004-02-01), Keller et al.
M.D. Powell et al., “Reducing Set-Associative Cache Energy via Way-Prediction and Selective Direct-Mapping,” Proceedings of the 34th International Symposium on Microarchitecture (MICRO), 12 pages, 2001.
Atallah Francois Ibrahim
Dieffenderfer James Norris
Fischer Jeffrey H.
Fragano Michael Thomas
Geise Daniel Stephen
Phung Anh
Ryan & Mason & Lewis, LLP
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