Random access memory

Details Random access memory Random access memory

1993-09-14

1995-02-21

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Precharge

3652335, 365190, G11C 700

Patent

active

053922492

ABSTRACT:
A semiconductor storage device which can perform reading operations at a high speed is provided. A voltage apply control circuit (21) captures an ATD control signal(S7) of an ATD control circuit (7) and an output signal (OUT) of an output buffer (6) and outputs a control signal (S21) to a voltage apply circuit (22) on the basis of the output signal (OUT) during an H level period of the ATD control signal (S7). The voltage apply circuit (22) applies voltages to a bit line BL and a bit line BL so that the bit line pair BL and BL is equalized in a shorter period as possible on the basis of the control signal (S21). The equalizing processing is accomplished at a high speed, which enables high-speed reading operations.

REFERENCES:
patent: 4924443 (1990-05-01), Mattausch
patent: 5029135 (1991-07-01), Okubo
patent: 5268874 (1993-12-01), Tamauchi

Affiliated with

Also associated with

Rating

Random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1940251